Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers

The nonlocal dynamics of electrons in pseudomorphic AlGaAs/GaAs/InGaAs heterostructures with double-sided donor-acceptor doping AlGaAs barriers and additional digital potential short-period AlAs/GaAs superlattices around the doped regions has been theoretically studied. For studied heterostructures, introduction significantly, by 30-40%, increases drift velocity overshot when they enter region a strong field. effect localization hot on states along edges InGaAs quantum well is revealed. It shown that taking this into account significantly overshot, bringing it closer to maximum theoretical limit for model used --- undoped bulk material. Keywords: barriers, overshot.